s1 sc70-6 s1 g1 d2 d1 g2 s2 g1 d2 d1 g2 s2 3 2 1 4 5 6 FDG1024NZ features ? max r ds(on) = 175 m ? at v gs = 4.5 v, i d = 1.2 a ? max r ds(on) = 215 m ? at v gs = 2.5 v, i d = 1.0 a ? max r ds(on) = 270 m ? at v gs = 1.8 v, i d = 0.9 a ? max r ds(on) = 389 m ? at v gs = 1.5 v, i d = 0.8 a ? hbm esd protection level >2 kv (note 3) ? very low level gate drive requirements allowing operation in 3 v circuits (v gs(th) < 1.5 v) ? very small package outline sc70-6 ? rohs compliant mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 20 v v gs gate to source voltage 8 v i d -continuous t a = 25c (note 1a) 1.2 a -pulsed 6 p d power dissipation t a = 25c (note 1a) 0.36 w power dissipation t a = 25c (note 1b) 0.30 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 350 c/w r ja thermal resistance, junction to ambient (note 1b) 415 device marking device package reel size tape width quantity .24 FDG1024NZ sc70-6 7 ? 8 mm 3000 units smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 14 mv/c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 8 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 0.4 0.8 1.0 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -3 mv/c r ds(on) static drain to source on resistance v gs = 4.5 v, i d = 1.2 a 160 175 m ? v gs = 2.5 v, i d = 1.0 a 185 215 v gs = 1.8 v, i d = 0.9 a 232 270 v gs = 1.5 v, i d = 0.8 a 321 389 v gs = 4.5 v, i d = 1.2 a, t j =125 c 220 259 g fs forward transconductance v dd = 5 v, i d = 1.2 a 4 s c iss input capacitance v ds = 10 v, v gs = 0 v, f = 1 mhz 115 150 pf c oss output capacitance 25 35 pf c rss reverse transfer capacitance 20 25 pf r g gate resistance 4.6 ? t d(on) turn-on delay time v dd = 10 v, i d = 1.2 a, v gs = 4.5 v, r gen = 6 ? 3.7 10 ns t r rise time 1.7 10 ns t d(off) turn-off delay time 11 19 ns t f fall time 1.5 10 ns q g total gate charge v gs = 4.5 v, v dd = 10 v, i d = 1.2 a 1.8 2.6 nc q gs gate to source charge 0.3 nc q gd gate to drain ?miller? charge 0.4 nc i s maximum continuous drain-source diode forward current 0.3 a v sd source to drain diode forward voltage v gs = 0 v, i s = 0.3 a (note 2) 0.7 1.2 v t rr reverse recovery time i f = 1.2 a, di/dt = 100 a/ s 10 20 ns q rr reverse recovery charge 1.9 10 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. 2. pulse test: pulse width < 30 0 s, duty cycle < 2.0%. 3: the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied . a. 350 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 415 c/w when mounted on a minimum pad of 2 oz copper. FDG1024NZ product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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